Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices

Abstract

In this study, the hopping conduction distance variation of Zn:SiO2 resistance random access memory (RRAM) devices with different operating compliance currents was discussed and verified. To investigate and determine the hopping conduction distance dependent activation energy characteristics, the Arrhenius plot of low resistance state of Zn:SiO2 RRAM devices was applied, from which we proposed carrier conduction model. With the increase of current compliance, more metal ions would accumulate to form precipitates with larger diameter, which in turn resulted in the shortening of hopping distance. Because of shorter hopping distance, activation energy for carrier hopping would decrease. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799655]