完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lu, Yu-Lun | en_US |
dc.contributor.author | Lee, Yao-Jen | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.date.accessioned | 2014-12-08T15:30:43Z | - |
dc.date.available | 2014-12-08T15:30:43Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.issn | 2162-8742 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21950 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/2.003201ssl | en_US |
dc.description.abstract | In this study, activation and crystallization in short channel amorphous Si TFTs were demonstrated using a novel microwave annealing (MWA) technique. Both low-temperature MWA and rapid thermal annealing (RTA) were compared to study the dopant activation level. We successfully activated the source/drain region, improved the electronic mobility and suppressed the short-channel effects using low temperature MWA. This can reduce the annealing temperature and processing time below that of solid phase crystallization (SPC). This technique is promising for realizing a high utility rate of AM-LCDs with low cost. (C) 2012 The Electrochemical Society. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Simultaneous Activation and Crystallization by Low-Temperature Microwave Annealing for Improved Quality of Amorphous Silicon Thin-Film Transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/2.003201ssl | en_US |
dc.identifier.journal | ECS SOLID STATE LETTERS | en_US |
dc.citation.volume | 1 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | P1 | en_US |
dc.citation.epage | P3 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000318339200004 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |