标题: | Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics |
作者: | Lee, Dai-Ying Tsai, Tsung-Ling Tseng, Tseung-Yuen 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 15-七月-2013 |
摘要: | Transition of resistive switching (RS) behavior from bipolar to unipolar is observed in Pt/ZrO2/HfO2/TiN device. Due to the lower oxygen vacancy concentration of the HfO2 layer, formation/rupture of the conducting filament is confined in the HfO2 layer. To fulfill one diode and one resistor (1D1R) structure, the electrical relation between the RS device and diode is investigated. A Pt/InZnO/CoO/Pt/TiN oxide diode is fabricated to provide enough forward current and large forward/reverse current ratio to achieve unipolar RS behavior. The 1D-1R structure with Pt/ZrO2/HfO2/TiN resistive random access memory shows robust retention and nondestructive readout property at 85 degrees C. (C) 2013 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4816053 http://hdl.handle.net/11536/22194 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4816053 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 103 |
Issue: | 3 |
结束页: | |
显示于类别: | Articles |
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