Long-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperature

標題:	Long-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperature
作者:	Lin, Wei-Hsun Wang, Kai-Wei Lin, Shih-Yen Wu, Meng-Chyi 光電學院光電工程學系 College of Photonics Department of Photonics
關鍵字:	Nanostructures;Antimonides;Molecular beam epitaxy;Semiconducting III-V materials
公開日期:	1-Sep-2013
摘要:	The room-temperature photoluminescence (PL) and electroluminescence (EL) exceeding 1.3 mu m are observed for InGaAs-capped GaSb quantum-ring (QR) structures. With increasing In composition, the emission wavelength would shift from 1.18 to 131 mu m. The InGaAs-capped GaSb QRs also exhibit a higher injection current and stronger EL intensity at the same applied voltage. With the observation of low-temperature PL spectra, the transition mechanisms of the standard and InGaAs-capped QRs are further investigated. (c) 2012 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.jcrysgro.2012.12.066 http://hdl.handle.net/11536/22480
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2012.12.066
期刊:	JOURNAL OF CRYSTAL GROWTH
Volume:	378
Issue:
起始頁:	571
結束頁:	575
Appears in Collections:	Conferences Paper

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