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dc.contributor.authorWu, Su-Haoen_US
dc.contributor.authorWu, Jieh-Tsorngen_US
dc.date.accessioned2014-12-08T15:31:53Z-
dc.date.available2014-12-08T15:31:53Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSSC.2013.2264137en_US
dc.identifier.urihttp://hdl.handle.net/11536/22520-
dc.description.abstractA fourth-order discrete-time delta-sigma modulator (DSM) was fabricated using a 65-nm CMOS technology. It combines low-complexity circuits and digital calibrations to achieve high speed and high performance. The DSM is a cascade of two second-order loops. It has a sampling rate of 1.1 GHz and an input bandwidth of 16.67 MHz with an oversampling ratio of 33. It uses high-speed opamps with a dc gain of only 10. Two different types of digital calibrations are used. We first employ the integrator leakage calibration to correct the poles of the integrators. We then apply the noise leakage calibration to minimize the leaking quantization noise from the first loop. The noise leakage calibration also relaxes the component-matching requirements. Both calibrations can operate in the background without interrupting the normal DSM operation. The chip's measured signal-to-noise-and-distortion ratio and dynamic range are 74.32 and 81 dB, respectively. The chip consumes 94 mW from a 1-V supply. The active area is 0.33 x 0.58 mm(2).en_US
dc.language.isoen_USen_US
dc.subjectAnalog-digital conversionen_US
dc.subjectanalog-to-digital converter (ADC)en_US
dc.subjectcalibrationen_US
dc.subjectdelta-sigma modulationen_US
dc.subjectoversamplingen_US
dc.subjectswitched-capacitor circuitsen_US
dc.titleA 81-dB Dynamic Range 16-MHz Bandwidth Delta Sigma Modulator Using Background Calibrationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSSC.2013.2264137en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume48en_US
dc.citation.issue9en_US
dc.citation.spage2170en_US
dc.citation.epage2179en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000323651000018-
dc.citation.woscount1-
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