标题: | Bipolar Ni/TiO2/HfO2/Ni RRAM With Multilevel States and Self-Rectifying Characteristics |
作者: | Hsu, Chung-Wei Hou, Tuo-Hung Chen, Mei-Chin Wang, I-Ting Lo, Chun-Li 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | 3-D memory;crossbar array;resistive-switching memory (RRAM);self-rectification |
公开日期: | 1-七月-2013 |
摘要: | To be compatible with 3-D vertical crossbar arrays, a TiO2/HfO2 bilayer resistive-switching memory (RRAM) cell sandwiched between Ni electrodes is developed. The proposed device has numerous highly desired features for the implementation of 3-D vertical RRAM, including: 1) stable bipolar resistive switching; 2) forming free; 3) self-compliance; 4) self-rectification; 5) multiple resistance states; and 6) room-temperature process. The resistive switching and current rectification are attributed to oxygen vacancy migration in HfO2 and potential barrier modulation of the asymmetric TiO2/HfO2 tunnel barrier. The rectification ratio up to 10(3) is capable of realizing a single-crossbar array up to 16 Mb for future high-density storage class memory applications. |
URI: | http://dx.doi.org/10.1109/LED.2013.2264823 http://hdl.handle.net/11536/22603 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2013.2264823 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 34 |
Issue: | 7 |
起始页: | 885 |
结束页: | 887 |
显示于类别: | Articles |
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