ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P+ POLYSILICON GATED P-CHANNEL MOSFET

標題:	ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P+ POLYSILICON GATED P-CHANNEL MOSFET
作者:	CHANG, CY LIN, CY CHOU, JW HSU, CCH PAN, HT KO, J 電控工程研究所奈米中心 Institute of Electrical and Control Engineering Nano Facility Center
公開日期:	1-十一月-1994
摘要:	The boron-penetration-dependent Reverse Short Channel Effect (RSCE) on the threshold voltage is observed for short channel p+ poly-gate PMOSFET's. The RSCE is found to be more significant as the boron penetration becomes more severe. The RSCE is significant in BF2 doped poly-gated MOS devices and is alleviated in buffered poly-gated MOS devices. Fluorine enhanced boron diffusion in the gate oxide during high temperature process is believed to account for the RSCE, which is also confirmed by using a two-dimensional process simulator.
URI:	http://dx.doi.org/10.1109/55.334659 http://hdl.handle.net/11536/2277
ISSN:	0741-3106
DOI:	10.1109/55.334659
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	15
Issue:	11
起始頁:	437
結束頁:	439
顯示於類別：	期刊論文

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