CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION

doi:10.1063/1.357206

標題:	CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
作者:	JUNG, TG CHANG, CY LIU, CS CHANG, TC LIN, HC TSAI, WC HUANG, GW CHEN, LP 電控工程研究所 Institute of Electrical and Control Engineering
公開日期:	15-十月-1994
摘要:	The unipolar Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition at 550-degrees-C is demonstrated. The dark current density measured at 77 K is (2.5 +/- 0.1) x 10(-7) A/cm2 for the barrier height of 176 +/- 8 meV, at a reverse bias of 1 V. The barrier heights are measured from the activation analysis of the saturation current and compared to the theoretical values. The barrier height decreases as the thickness of the SiGe strained layer exceeds the critical thickness.
URI:	http://dx.doi.org/10.1063/1.357206 http://hdl.handle.net/11536/2282
ISSN:	0021-8979
DOI:	10.1063/1.357206
期刊:	JOURNAL OF APPLIED PHYSICS
Volume:	76
Issue:	8
起始頁:	4921
結束頁:	4923
顯示於類別：	期刊論文