標題: Novel Ion Bombardment Technique for Doping Limited Cu Source in SiOx-Based Nonvolatile Switching Layer
作者: Liu, Sheng-Hsien
Yang, Wen-Luh
Lin, Yu-Hsien
Wu, Chi-Chang
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: Cu-doped SiOx;ion bombardment (IB);limited Cu source;resistance random access memory (ReRAM)
公開日期: 1-Nov-2013
摘要: A novel ion bombardment (IB) technique is presented to dope a limited Cu source in an SiOx switching layer (SiOx:Cu SL) for nonvolatile memory applications. Compared with other Cu-doping methods, this IB technique has many benefits, including a local-doping effect, room-temperature process, and compatibility with current IC manufacturing technology, besteading the 1T-1R integration. Through transmission electron microscopy and energy dispersive spectrometer analyses, an IB-induced SiOx:Cu SL is confirmed. In contrast with the conventional Cu/SiOx-stacked sample, this IB-induced SiOx:Cu SL exhibits superior performance in terms of lower forming/RESET voltages, higher uniformity of SET/RESET voltages, and more stable high-temperature retention characteristics. Additionally, so far, this IB-induced TaN/SiOx:Cu/TaN device has shown the best switching endurance properties for the general SiOx-based Cu filament resistance random access memory.
URI: http://dx.doi.org/10.1109/LED.2013.2280286
http://hdl.handle.net/11536/22933
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2280286
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 11
起始頁: 1388
結束頁: 1390
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