1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorSu, Yu-Tingen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorZhang, Ruien_US
dc.contributor.authorLou, J. C.en_US
dc.contributor.authorChen, Jung-Huien_US
dc.contributor.authorYoung, Tai-Faen_US
dc.contributor.authorChen, Kai-Huangen_US
dc.contributor.authorTseng, Bae-Hengen_US
dc.contributor.authorShih, Chih-Chengen_US
dc.contributor.authorYang, Ya-Liangen_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorChu, Tian-Jianen_US
dc.contributor.authorPan, Chih-Hungen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:32:57Z-
dc.date.available2014-12-08T15:32:57Z-
dc.date.issued2013-10-14en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4825104en_US
dc.identifier.urihttp://hdl.handle.net/11536/22978-
dc.description.abstractIn this Letter, the characteristics of set process of hafnium oxide based resistance random access memory are investigated by different set processes with increasing compliance current. Through current fitting, carrier conduction mechanism of low resistance state changes from hopping to surface scattering and finally to ohmic conduction with the increase of setting compliance current. Experimental data of current-voltage measurement under successive increasing temperature confirms the conduction mechanism transition. A model of filament growth is eventually proposed in a way by merging discrete metal precipitates and electrical field simulation by COMSOL Multiphysics further clarifies the properties of filament growth process. (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of hafnium oxide resistance random access memory with different setting compliance currenten_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4825104en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume103en_US
dc.citation.issue16en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000326148700085-
dc.citation.woscount11-
Appears in Collections:Articles


Files in This Item:

  1. 000326148700085.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...