DESIGN-MODEL AND GUIDELINE FOR N-WELL GUARD RING IN EPITAXIAL CMOS

doi:10.1109/16.324585

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DC Field	Value	Language
dc.contributor.author	HUANG, CY	en_US
dc.contributor.author	CHEN, MJ	en_US
dc.date.accessioned	2014-12-08T15:03:45Z	-
dc.date.available	2014-12-08T15:03:45Z	-
dc.date.issued	1994-10-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.324585	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2300	-
dc.description.abstract	This work reports the development of design model for n-well guard rings in a CMOS process utilizing a low-doped epitaxial layer on a highly doped substrate. The validity of the model has been judged by a wide range of experimental data measured from the fabricated n-well guard ring structures with guard ring width as parameter. From the model developed, guideline has been drawn to minimize the guard ring width while critically suppressing the amount of electrons escaping from guard ring.	en_US
dc.language.iso	en_US	en_US
dc.title	DESIGN-MODEL AND GUIDELINE FOR N-WELL GUARD RING IN EPITAXIAL CMOS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/16.324585	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	41	en_US
dc.citation.issue	10	en_US
dc.citation.spage	1806	en_US
dc.citation.epage	1810	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1994PK41000017	-
dc.citation.woscount	6	-
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