THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORS

doi:10.1109/55.320977

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DC Field	Value	Language
dc.contributor.author	YANG, CK	en_US
dc.contributor.author	LEI, TF	en_US
dc.contributor.author	LEE, CL	en_US
dc.date.accessioned	2014-12-08T15:03:46Z	-
dc.date.available	2014-12-08T15:03:46Z	-
dc.date.issued	1994-10-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.320977	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2305	-
dc.description.abstract	The low pressure NH3-annealing and the H-2. plasma hydrogenation were jointly used to improve the characteristics of polysilicon thin-film transistors (TFT's). It was found that the TFT's after applying the above treatments achieved better subthreshold swings, threshold voltages, field effect mobilities, off currents, and reliability. It is believed that the improvement was due to the gate oxynitride formation and the H-2-plasma had a better passivation effect on the oxynitride.	en_US
dc.language.iso	en_US	en_US
dc.title	THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.320977	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	15	en_US
dc.citation.issue	10	en_US
dc.citation.spage	389	en_US
dc.citation.epage	390	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1994PL26900006	-
dc.citation.woscount	11	-
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