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dc.contributor.authorYANG, CKen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.authorLEE, CLen_US
dc.date.accessioned2014-12-08T15:03:46Z-
dc.date.available2014-12-08T15:03:46Z-
dc.date.issued1994-10-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.320977en_US
dc.identifier.urihttp://hdl.handle.net/11536/2305-
dc.description.abstractThe low pressure NH3-annealing and the H-2. plasma hydrogenation were jointly used to improve the characteristics of polysilicon thin-film transistors (TFT's). It was found that the TFT's after applying the above treatments achieved better subthreshold swings, threshold voltages, field effect mobilities, off currents, and reliability. It is believed that the improvement was due to the gate oxynitride formation and the H-2-plasma had a better passivation effect on the oxynitride.en_US
dc.language.isoen_USen_US
dc.titleTHE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.320977en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume15en_US
dc.citation.issue10en_US
dc.citation.spage389en_US
dc.citation.epage390en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994PL26900006-
dc.citation.woscount11-
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