THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORS

標題:	THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORS
作者:	YANG, CK LEI, TF LEE, CL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-十月-1994
摘要:	The low pressure NH3-annealing and the H-2. plasma hydrogenation were jointly used to improve the characteristics of polysilicon thin-film transistors (TFT's). It was found that the TFT's after applying the above treatments achieved better subthreshold swings, threshold voltages, field effect mobilities, off currents, and reliability. It is believed that the improvement was due to the gate oxynitride formation and the H-2-plasma had a better passivation effect on the oxynitride.
URI:	http://dx.doi.org/10.1109/55.320977 http://hdl.handle.net/11536/2305
ISSN:	0741-3106
DOI:	10.1109/55.320977
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	15
Issue:	10
起始頁:	389
結束頁:	390
顯示於類別：	期刊論文

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