完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiou, Uio-Pu | en_US |
dc.contributor.author | Shieh, Jia-Min | en_US |
dc.contributor.author | Yang, Chih-Chao | en_US |
dc.contributor.author | Huang, Wen-Hsien | en_US |
dc.contributor.author | Kao, Yo-Tsung | en_US |
dc.contributor.author | Pan, Fu-Ming | en_US |
dc.date.accessioned | 2014-12-08T15:33:34Z | - |
dc.date.available | 2014-12-08T15:33:34Z | - |
dc.date.issued | 2013-11-11 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4832072 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/23268 | - |
dc.description.abstract | We fabricated nano-crystalline Si (nc-Si: H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (mu(FE)) and adjustable threshold voltages (V-th). The nc-Si: H channel and source/drain (S/D) of the multilayered TFT were deposited at 375 degrees C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high mu(FE) of 370 cm(2) /V-s, a steep subthreshold slope of 90 mV/decade, and a low V-th of -0.64 V. When biased with the double-gate driving mode, the device shows a tunable V-th value extending from -1V up to 2.7 V. (C) 2013 AIP Publishing LLC. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4832072 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 103 | en_US |
dc.citation.issue | 20 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000327818700094 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |