標題: MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
作者: WU, CC
CHANG, CY
CHEN, PA
CHEN, HD
LIN, KC
CHAN, SH
交大名義發表
電控工程研究所
National Chiao Tung University
Institute of Electrical and Control Engineering
公開日期: 5-Sep-1994
摘要: Bis(cyclopentadienyl) magnesium, CP2Mg, was used as a magnesium dopant in the InGaAlP layers by low-pressure metalorganic chemical vapor deposition. The hazy surface morphology of heavily doped InGaAlP layers is significantly improved by using magnesium dopant instead of the conventional zinc dopant. We demonstrate that the effective doping efficiency of magnesium is two orders of magnitude higher than that of zinc dopant in the heavily doped InGaAlP layer grown at 720-degrees-C.
URI: http://dx.doi.org/10.1063/1.112091
http://hdl.handle.net/11536/2326
ISSN: 0003-6951
DOI: 10.1063/1.112091
期刊: APPLIED PHYSICS LETTERS
Volume: 65
Issue: 10
起始頁: 1269
結束頁: 1271
Appears in Collections:Articles