標題: ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURES
作者: JEN, TS
SHIN, NF
TSAY, WC
CHEN, JY
NING, SL
HONG, JW
CHANG, CY
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-九月-1994
摘要: In order to improve the electroluminescence (EL) characteristics of hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLEDs), the quantum-well-injection (QWI) structures have been incorporated into their intrinsic (i-) layer. Two types of TFLED were fabricated to study the effect of the incorporated QWI structures on their EL characteristics: the device I contains a step-gap QWI structure of barrier (15 angstrom)/well (45 angstrom)/barrier (15 angstrom) inserted at both the p-i and i-n interfaces, and the device Il has only one graded-gap QWI structure of barrier (10 angstrom)/well (10 angstrom)/barrier (10 angstrom) inserted at the p-i interface. The obtained brightness of device I was about 10 cd/m2 at an injection current density of 1 A/cm2. The emission light of device I was yellow-like as detected by human eyes. Whereas, for device II, the brightness was about 256 cd/m2 at 800 mA/cm2 and an orange light emission was observed.
URI: http://dx.doi.org/10.1016/0038-1101(94)90044-2
http://hdl.handle.net/11536/2335
ISSN: 0038-1101
DOI: 10.1016/0038-1101(94)90044-2
期刊: SOLID-STATE ELECTRONICS
Volume: 37
Issue: 9
起始頁: 1619
結束頁: 1626
顯示於類別:期刊論文