Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel

Abstract

In this letter, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channel MOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversion-mode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent I-ON/I-OFF ratio and good short channel effect control on the channel potential. The current ratio is of similar to 6 x 10(3) (I-D) at V-DS = -0.1 V, V-GS = -3, and 0 V. The relatively low OFF-current is of 6 nA/ mu m at V-DS = -0.1 V and V-GS = 0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at L-G = 120 nm.