1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChiou, Shan-Hawen_US
dc.contributor.authorHuang, Chiung-Huien_US
dc.date.accessioned2014-12-08T15:33:55Z-
dc.date.available2014-12-08T15:33:55Z-
dc.date.issued2014-01-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2290707en_US
dc.identifier.urihttp://hdl.handle.net/11536/23385-
dc.description.abstractWe report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of <2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 x 10(-11) A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm(2)/Vs, which may create the potential application for high resolution display.en_US
dc.language.isoen_USen_US
dc.subjectTiO2en_US
dc.subjectindium-gallium-zinc oxide (IGZO)en_US
dc.subjectthin-film transistor (TFT)en_US
dc.subjectmobilityen_US
dc.subjectgetteringen_US
dc.titleHigh Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnOen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2290707en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume35en_US
dc.citation.issue1en_US
dc.citation.spage87en_US
dc.citation.epage89en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000329061300029-
dc.citation.woscount3-
Appears in Collections:Articles


Files in This Item:

  1. 000329061300029.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...