High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

doi:10.1109/LED.2013.2290707

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, Hsiao-Hsuan	en_US
dc.contributor.author	Chang, Chun-Yen	en_US
dc.contributor.author	Cheng, Chun-Hu	en_US
dc.contributor.author	Chiou, Shan-Haw	en_US
dc.contributor.author	Huang, Chiung-Hui	en_US
dc.date.accessioned	2014-12-08T15:33:55Z	-
dc.date.available	2014-12-08T15:33:55Z	-
dc.date.issued	2014-01-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2013.2290707	en_US
dc.identifier.uri	http://hdl.handle.net/11536/23385	-
dc.description.abstract	We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of <2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 x 10(-11) A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm(2)/Vs, which may create the potential application for high resolution display.	en_US
dc.language.iso	en_US	en_US
dc.subject	TiO2	en_US
dc.subject	indium-gallium-zinc oxide (IGZO)	en_US
dc.subject	thin-film transistor (TFT)	en_US
dc.subject	mobility	en_US
dc.subject	gettering	en_US
dc.title	High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2013.2290707	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	35	en_US
dc.citation.issue	1	en_US
dc.citation.spage	87	en_US
dc.citation.epage	89	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000329061300029	-
dc.citation.woscount	3	-
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