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dc.contributor.authorZhu, SYen_US
dc.contributor.authorLi, Ren_US
dc.contributor.authorLee, SJen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorDu, AYen_US
dc.contributor.authorSingh, Jen_US
dc.contributor.authorZhu, CXen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorKwong, DLen_US
dc.date.accessioned2014-12-08T15:34:48Z-
dc.date.available2014-12-08T15:34:48Z-
dc.date.issued2005-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2004.841462en_US
dc.identifier.urihttp://hdl.handle.net/11536/23688-
dc.description.abstractSchottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as similar to5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si.en_US
dc.language.isoen_USen_US
dc.subjectgermaniumen_US
dc.subjecthigh-kappaen_US
dc.subjectmetal gateen_US
dc.subjectMOSFETen_US
dc.subjectSchottkyen_US
dc.titleGermanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2004.841462en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume26en_US
dc.citation.issue2en_US
dc.citation.spage81en_US
dc.citation.epage83en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000226479100011-
dc.citation.woscount66-
Appears in Collections:Articles


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