GaN-Based Light-Emitting-Diode With a p-InGaN Layer

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DC Field	Value	Language
dc.contributor.author	Chen, P. H.	en_US
dc.contributor.author	Kuo, Cheng-Huang	en_US
dc.contributor.author	Lai, W. C.	en_US
dc.contributor.author	Chen, Yu An	en_US
dc.contributor.author	Chang, L. C.	en_US
dc.contributor.author	Chang, S. J.	en_US
dc.date.accessioned	2014-12-08T15:34:56Z	-
dc.date.available	2014-12-08T15:34:56Z	-
dc.date.issued	2014-03-01	en_US
dc.identifier.issn	1551-319X	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/JDT.2013.2293767	en_US
dc.identifier.uri	http://hdl.handle.net/11536/23761	-
dc.description.abstract	GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.	en_US
dc.language.iso	en_US	en_US
dc.subject	Efficiency droop	en_US
dc.subject	light emitting diode (LED)	en_US
dc.subject	p-InGaN	en_US
dc.title	GaN-Based Light-Emitting-Diode With a p-InGaN Layer	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/JDT.2013.2293767	en_US
dc.identifier.journal	JOURNAL OF DISPLAY TECHNOLOGY	en_US
dc.citation.volume	10	en_US
dc.citation.issue	3	en_US
dc.citation.spage	204	en_US
dc.citation.epage	207	en_US
dc.contributor.department	照明與能源光電研究所	zh_TW
dc.contributor.department	Institute of Lighting and Energy Photonics	en_US
dc.identifier.wosnumber	WOS:000331967900005	-
dc.citation.woscount	0	-
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