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dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorLin, Wan-Yenen_US
dc.contributor.authorYen, Cheng-Chengen_US
dc.date.accessioned2014-12-08T15:35:09Z-
dc.date.available2014-12-08T15:35:09Z-
dc.date.issued2014-01-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2013.08.010en_US
dc.identifier.urihttp://hdl.handle.net/11536/23855-
dc.description.abstractA new silicon controlled rectifier (SCR)-based transient detection circuit for on-chip protection design against system-level electrical transient disturbance is proposed. The circuit function to detect positive or negative electrical transients during system-level electrostatic discharge (ESD) and electrical fast transient (EFT) tests has been verified in silicon chip. The experimental results in a 0.18-mu m CMOS process have confirmed that the new proposed detection circuit can successfully memorize the occurrence of system-level electrical transient disturbance events. The detection results can be cooperated with firmware design to execute system recovery procedures, therefore the immunity of microelectronic systems against system-level ESD or EFT tests can be effectively improved. (C) 2013 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleSCR-based transient detection circuit for on-chip protection design against system-level electrical transient disturbanceen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.microrel.2013.08.010en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume54en_US
dc.citation.issue1en_US
dc.citation.spage71en_US
dc.citation.epage78en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000331342800011-
dc.citation.woscount0-
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