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dc.contributor.authorVan-Truong Daien_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorLin, Shih-Weien_US
dc.contributor.authorLee, Yi-Shanen_US
dc.contributor.authorZhang, Yin-Jieen_US
dc.contributor.authorLi, Liang-Chenen_US
dc.contributor.authorLee, Chien-Pingen_US
dc.date.accessioned2014-12-08T15:35:30Z-
dc.date.available2014-12-08T15:35:30Z-
dc.date.issued2014-02-24en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.22.003811en_US
dc.identifier.urihttp://hdl.handle.net/11536/24024-
dc.description.abstractA high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, two-dimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources. (C) 2014 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleHigh-quality planar light emitting diode formed by induced two-dimensional electron and hole gasesen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.22.003811en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume22en_US
dc.citation.issue4en_US
dc.citation.spage3811en_US
dc.citation.epage3817en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department奈米科技中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentCenter for Nanoscience and Technologyen_US
dc.identifier.wosnumberWOS:000332520000011-
dc.citation.woscount0-
Appears in Collections:Articles


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