High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases

doi:10.1364/OE.22.003811

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Van-Truong Dai	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.contributor.author	Lin, Shih-Wei	en_US
dc.contributor.author	Lee, Yi-Shan	en_US
dc.contributor.author	Zhang, Yin-Jie	en_US
dc.contributor.author	Li, Liang-Chen	en_US
dc.contributor.author	Lee, Chien-Ping	en_US
dc.date.accessioned	2014-12-08T15:35:30Z	-
dc.date.available	2014-12-08T15:35:30Z	-
dc.date.issued	2014-02-24	en_US
dc.identifier.issn	1094-4087	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OE.22.003811	en_US
dc.identifier.uri	http://hdl.handle.net/11536/24024	-
dc.description.abstract	A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, two-dimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources. (C) 2014 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OE.22.003811	en_US
dc.identifier.journal	OPTICS EXPRESS	en_US
dc.citation.volume	22	en_US
dc.citation.issue	4	en_US
dc.citation.spage	3811	en_US
dc.citation.epage	3817	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	奈米科技中心	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Center for Nanoscience and Technology	en_US
dc.identifier.wosnumber	WOS:000332520000011	-
dc.citation.woscount	0	-
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