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dc.contributor.authorJEN, TSen_US
dc.contributor.authorLEU, STen_US
dc.contributor.authorCHOU, TCen_US
dc.contributor.authorHONG, JWen_US
dc.contributor.authorCHANG, CYen_US
dc.date.accessioned2014-12-08T15:03:53Z-
dc.date.available2014-12-08T15:03:53Z-
dc.date.issued1994-07-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.33.L977en_US
dc.identifier.urihttp://hdl.handle.net/11536/2406-
dc.description.abstractN2O-plasma was used to treat the as-deposited a-SiO(x)N(y)/a-SiN(x) gate insulators of inverted-staggered a-Si:H thin-film transistors (TFTs), and its effects on electrical properties of TFTs were investigated. The TFTs with N2O-plasma-treated gate insulators tended to have a smaller threshold voltage (V(th)), V(th) Shift and hysteresis width (W(FB)) of the forward and backward transfer characteristics. In addition, the results of a bias-temperature stress (BTS) experiment showed that the N2O-Plasma-treated devices had a smaller decay of drain current with time. These phenomena demonstrated that the N2O-PlasMa treatment could be used to improve the electrical stability of a-Si:H TFTs.en_US
dc.language.isoen_USen_US
dc.subjectTHIN-FILM TRANSISTORen_US
dc.subjectELECTRICAL STABILITYen_US
dc.subjectN2O-PLASMA TREATMENTen_US
dc.titleEFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORSen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.33.L977en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue7Ben_US
dc.citation.spageL977en_US
dc.citation.epageL979en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1994PA98300001-
dc.citation.woscount1-
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