Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shih, Jian-Yu | en_US |
dc.contributor.author | Chen, Yen-Chi | en_US |
dc.contributor.author | Chiang, Cheng-Hao | en_US |
dc.contributor.author | Chiu, Chih-Hung | en_US |
dc.contributor.author | Hu, Yu-Chen | en_US |
dc.contributor.author | Lo, Chung-Lun | en_US |
dc.contributor.author | Chang, Chi-Chung | en_US |
dc.contributor.author | Chen, Kuan-Neng | en_US |
dc.date.accessioned | 2014-12-08T15:35:46Z | - |
dc.date.available | 2014-12-08T15:35:46Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.isbn | 978-1-4799-0233-0 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24161 | - |
dc.description.abstract | In this paper, one novel packaging approach for crystal resonator with the quartz crystal is demonstrated, developed and characterized. The proposed crystal resonator of the novel package adopts several 3-D core technologies, such as Cu TSVs, thin-film Cu/Sn eutectic bonding, and wafer thinning. A 1210 crystal resonator with quartz blank mount is successfully developed with Cu TSVs that enables the electrical connection of the signal electrode on the quartz blank. The quartz blank is protected by the simultaneous formation of strength reinforcement and excellent sealing capacity of thin-film Cu/Sn eutectic bonding. With the well fabrication and the enhanced structure, excellent leakage results in the MIL-STD-883 hermetic test (8.5*10(-9) similar to 1*10(-8) Pa m(3)/sec by He leak detector) show the crystal resonator using 3D integration has the great performance and manufacturability to replace the conventional metal or ceramic enclosures for the next generation products. | en_US |
dc.language.iso | en_US | en_US |
dc.title | TSV-Based Quartz Crystal Resonator Using 3D Integration and Si Packaging Technologies | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | en_US |
dc.citation.spage | 599 | en_US |
dc.citation.epage | 604 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000332764900093 | - |
Appears in Collections: | Conferences Paper |