完整後設資料紀錄
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dc.contributor.authorShih, Jian-Yuen_US
dc.contributor.authorChen, Yen-Chien_US
dc.contributor.authorChiang, Cheng-Haoen_US
dc.contributor.authorChiu, Chih-Hungen_US
dc.contributor.authorHu, Yu-Chenen_US
dc.contributor.authorLo, Chung-Lunen_US
dc.contributor.authorChang, Chi-Chungen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2014-12-08T15:35:46Z-
dc.date.available2014-12-08T15:35:46Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-0233-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/24161-
dc.description.abstractIn this paper, one novel packaging approach for crystal resonator with the quartz crystal is demonstrated, developed and characterized. The proposed crystal resonator of the novel package adopts several 3-D core technologies, such as Cu TSVs, thin-film Cu/Sn eutectic bonding, and wafer thinning. A 1210 crystal resonator with quartz blank mount is successfully developed with Cu TSVs that enables the electrical connection of the signal electrode on the quartz blank. The quartz blank is protected by the simultaneous formation of strength reinforcement and excellent sealing capacity of thin-film Cu/Sn eutectic bonding. With the well fabrication and the enhanced structure, excellent leakage results in the MIL-STD-883 hermetic test (8.5*10(-9) similar to 1*10(-8) Pa m(3)/sec by He leak detector) show the crystal resonator using 3D integration has the great performance and manufacturability to replace the conventional metal or ceramic enclosures for the next generation products.en_US
dc.language.isoen_USen_US
dc.titleTSV-Based Quartz Crystal Resonator Using 3D Integration and Si Packaging Technologiesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)en_US
dc.citation.spage599en_US
dc.citation.epage604en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000332764900093-
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