Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate

Abstract

A low interface trap density (D-it) Al2O3/In0.53Ga0.47As/Si MOS capacitor fabricated on an In0.53Ga0.47As heterostructure layer directly grown on a 300 mm on-axis Si(100) substrate by MOCVD with a very thin buffer layer is demonstrated. Compared with the MOS capacitors fabricated on the In0.53Ga0.47As layer grown on the lattice-matched InP substrate, the Al2O3/In0.53Ga0.47As MOS capacitors fabricated on the Si substrate exhibit excellent capacitance-voltage characteristics with a small frequency dispersion of approximately 2.5%/decade and a low interlace trap density D-it close to 5.5 x 10(11)cm(-2) eV(-1). The results indicate the potential of integrating high-mobility InGaAs-based materials on a 300 mm Si wafer for post-CMOS device application in the future. (C) 2014 The Japan Society of Applied Physics