標題: FinFET SRAM Cell Optimization Considering Temporal Variability due to NBTI/PBTI and Surface Orientation
作者: Hu, Vita Pi-Ho
Fan, Ming-Long
Hsieh, Chien-Yu
Su, Pin
Chuang, Ching-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: This paper analyzes the impact of intrinsic process variation and NBTI/PBTI induced time-dependent variations on the stability/variability of 6T FinFET SRAM cells with various surface orientations. Due to quantum confinement, (110)-oriented pull-down devices with fin Line Edge Roughness (LER) show larger Vread,0 and Vtrip variations, thus degrading RSNM and its variability. (100)-oriented pull-up devices with fin LER show larger Vwrite,0 and Vtrip variations, hence degrade the variability of WSNM. The combined effects of intrinsic process variation and NBTI/PBTI induced variations have been examined to optimize the FinFET SRAM cells. Pull-up devices with (110) orientation suffer larger NBTI, resulting in large Vtrip variation and significant degradation of RSNM. Our study indicates that consideration of NBTI/PBTI induced temporal variation changes the optimal choice of FinFET SRAM cell surface orientations in term of mu RSNM/sigma RSNM.
URI: http://hdl.handle.net/11536/24546
ISBN: 978-1-4244-7701-2
ISSN: 1946-1569
期刊: SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES
起始頁: 269
結束頁: 272
Appears in Collections:Conferences Paper