標題: Ultra-Low Switching Power RRAM Using Hopping Conduction Mechanism
作者: Chin, Albert
Cheng, C. H.
Chiu, Y. C.
Zheng, Z. W.
Liu, M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: Very low 0.4 pJ switching energy, fast 50 ns switching time, large > 10(5) retention window at 85 degrees C, and 10(6) cycling endurance were achieved in Ni/GeOx/SrTiOy/TaN RRAM. This RRAM device has negative temperature coefficient (TC) and ruled by bulk hopping conduction mechanism that lead to potentially better distribution. This is in sharp contrast to the positive TC and randomly distributed metallic filament RRAM. Such low switching energy is necessary for large-array NAND memory application, a unique merit of this RRAM device.
URI: http://hdl.handle.net/11536/24562
http://dx.doi.org/10.1149/05004.0003ecst
ISBN: 978-1-60768-352-0
ISSN: 1938-5862
DOI: 10.1149/05004.0003ecst
期刊: DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10
Volume: 50
Issue: 4
起始頁: 3
結束頁: 8
Appears in Collections:Conferences Paper