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dc.contributor.authorChen, Ming-Jeren_US
dc.contributor.authorTu, Kong-Chiangen_US
dc.contributor.authorWang, Huan-Hsiungen_US
dc.contributor.authorChen, Chuan-Lien_US
dc.contributor.authorLai, Shiou-Yien_US
dc.contributor.authorLiu, You-Shengen_US
dc.date.accessioned2014-12-08T15:36:17Z-
dc.date.available2014-12-08T15:36:17Z-
dc.date.issued2014-07-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2014.2323259en_US
dc.identifier.urihttp://hdl.handle.net/11536/24625-
dc.description.abstractTrapping-detrapping of a single electron via an individual trap in metal-oxide-semiconductor field-effect transistor (MOSFET) gate dielectric constitutes two-level random telegraph signals. Recent 3-D technology computer-aided design (TCAD) simulations, on an individual MOSFET, revealed that with the position of the trap as a random variable, resulting random telegraph signals relative magnitude Delta I-d/I-d in the subthreshold current at low drain voltage can have two distinct distributions: a headed one for a percolation-free channel and a tail one for a percolative channel. The latter may be effectively treated by a literature formula: (Delta I-d/I-d) = (I-loc/I-d)(2), where I-loc is the local current around the trap. In this paper, we show how to make this formula practically useful. First, we conduct 3-D TCAD simulations on a 35 x 35-nm(2) channel to provide Delta I-d/I-d for a few positions of the trap. This leads to a new statistical model in closed form, which can reproduce headed distributions. Straightforwardly, key criteria are drawn from the model, which can act as guidelines for the adequate use of the I-loc/I-d formula. Extension to threshold voltage shift counterparts, from subthreshold through transition to inversion, is successfully achieved. Importantly, use of the model may overcome the drawbacks of the statistical experiment or simulation in the field.en_US
dc.language.isoen_USen_US
dc.subjectFluctuationsen_US
dc.subjectmetal-oxide-semiconductor field-effect transistors (MOSFETs)en_US
dc.subjectnanoen_US
dc.subjectnoiseen_US
dc.subjectpercolationen_US
dc.subjectrandom telegraph signals (RTSs)en_US
dc.subjecttechnology computer-aided design (TCAD)en_US
dc.subjecttrapen_US
dc.titleA Statistical Model for the Headed and Tail Distributions of Random Telegraph Signal Magnitudes in Nanoscale MOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2014.2323259en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume61en_US
dc.citation.issue7en_US
dc.citation.spage2495en_US
dc.citation.epage2502en_US
dc.contributor.department电子工程学系及电子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000338027200039-
dc.citation.woscount1-
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