标题: A Statistical Model for the Headed and Tail Distributions of Random Telegraph Signal Magnitudes in Nanoscale MOSFETs
作者: Chen, Ming-Jer
Tu, Kong-Chiang
Wang, Huan-Hsiung
Chen, Chuan-Li
Lai, Shiou-Yi
Liu, You-Sheng
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: Fluctuations;metal-oxide-semiconductor field-effect transistors (MOSFETs);nano;noise;percolation;random telegraph signals (RTSs);technology computer-aided design (TCAD);trap
公开日期: 1-七月-2014
摘要: Trapping-detrapping of a single electron via an individual trap in metal-oxide-semiconductor field-effect transistor (MOSFET) gate dielectric constitutes two-level random telegraph signals. Recent 3-D technology computer-aided design (TCAD) simulations, on an individual MOSFET, revealed that with the position of the trap as a random variable, resulting random telegraph signals relative magnitude Delta I-d/I-d in the subthreshold current at low drain voltage can have two distinct distributions: a headed one for a percolation-free channel and a tail one for a percolative channel. The latter may be effectively treated by a literature formula: (Delta I-d/I-d) = (I-loc/I-d)(2), where I-loc is the local current around the trap. In this paper, we show how to make this formula practically useful. First, we conduct 3-D TCAD simulations on a 35 x 35-nm(2) channel to provide Delta I-d/I-d for a few positions of the trap. This leads to a new statistical model in closed form, which can reproduce headed distributions. Straightforwardly, key criteria are drawn from the model, which can act as guidelines for the adequate use of the I-loc/I-d formula. Extension to threshold voltage shift counterparts, from subthreshold through transition to inversion, is successfully achieved. Importantly, use of the model may overcome the drawbacks of the statistical experiment or simulation in the field.
URI: http://dx.doi.org/10.1109/TED.2014.2323259
http://hdl.handle.net/11536/24625
ISSN: 0018-9383
DOI: 10.1109/TED.2014.2323259
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 61
Issue: 7
起始页: 2495
结束页: 2502
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