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dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorTang, Shih-Hsuanen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.date.accessioned2014-12-08T15:36:26Z-
dc.date.available2014-12-08T15:36:26Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-60768-376-6; 978-1-62332-025-6en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/11536/24783-
dc.identifier.urihttp://dx.doi.org/10.1149/05303.0059ecsten_US
dc.description.abstractIn the study, the growth of InAs on Si is demonstrated using "interface blocking" technique with SiGe layers as buffer layer. the growth of high quality Ge film on GaAs substrate by ultra high vacuum chemical vapor deposition and high quality InAs material on Ge/SiGe/Si template grown by molecular beam epitaxy will be particularly reported. By the observation of XRD and AFM, both Ge film grown on GaAs material and InAs grown on Si substrates demonstrate high crystallinity and good surface morphology. The developed epitaxial materials systems including Ge on GaAs and InAs on Si are useful for future III-V/Ge/Si integration for next generation high speed low power CMOS application as well as for RF/digital mixed signal circuit application in the future.en_US
dc.language.isoen_USen_US
dc.titleThe Materials Integration of Ge and InxGa1-xAs on Si Template for Next Generation CMOS Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/05303.0059ecsten_US
dc.identifier.journalSILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 3en_US
dc.citation.volume53en_US
dc.citation.issue3en_US
dc.citation.spage59en_US
dc.citation.epage67en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000338968800007-
Appears in Collections:Conferences Paper


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