標題: The Materials Integration of Ge and InxGa1-xAs on Si Template for Next Generation CMOS Applications
作者: Chang, Edward Yi
Tang, Shih-Hsuan
Lin, Yueh-Chin
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2013
摘要: In the study, the growth of InAs on Si is demonstrated using "interface blocking" technique with SiGe layers as buffer layer. the growth of high quality Ge film on GaAs substrate by ultra high vacuum chemical vapor deposition and high quality InAs material on Ge/SiGe/Si template grown by molecular beam epitaxy will be particularly reported. By the observation of XRD and AFM, both Ge film grown on GaAs material and InAs grown on Si substrates demonstrate high crystallinity and good surface morphology. The developed epitaxial materials systems including Ge on GaAs and InAs on Si are useful for future III-V/Ge/Si integration for next generation high speed low power CMOS application as well as for RF/digital mixed signal circuit application in the future.
URI: http://hdl.handle.net/11536/24783
http://dx.doi.org/10.1149/05303.0059ecst
ISBN: 978-1-60768-376-6; 978-1-62332-025-6
ISSN: 1938-5862
DOI: 10.1149/05303.0059ecst
期刊: SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 3
Volume: 53
Issue: 3
起始頁: 59
結束頁: 67
Appears in Collections:Conferences Paper


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