標題: Novel Omega-Shaped-Gated TFT SONOS Memory
作者: Liao, Ta-Chuan
Chen, Sheng-Kai
Kang, Tsung-Kuei
Hsu, Pang-Yu
Lin, Chia-Min
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2009
摘要: A novel omega-shaped-gated (Omega-Gate) polycrystalline-silicon thin-film transistor (TFT) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory with field-enhanced nanowire (FEN) structure has been proposed to improve the program and erase (P/E) performance. Each nanowire inherently had twin sharp corners fabricated simply by sidewall spacer formation to obtain high local electric fields. The field-enhanced carrier tunneling via such a structure led to faster P/E speed and wider memory window for the Omega-Gate SONOS as compared to the conventional planar (CP) counterpart. Such an Omega-Gate-TFT SONOS memory using a simple process is very suitable for future system-on-panel applications.
URI: http://hdl.handle.net/11536/24795
http://dx.doi.org/10.1149/1.3203952
ISBN: 978-1-60768-094-9; 978-1-56677-744-5
ISSN: 1938-5862
DOI: 10.1149/1.3203952
期刊: ULSI PROCESS INTEGRATION 6
Volume: 25
Issue: 7
起始頁: 163
結束頁: 168
Appears in Collections:Conferences Paper