標題: Testing Methods for a Write-Assist Disturbance-Free Dual-Port SRAM
作者: Yang, Hao-Yu
Lin, Chen-Wei
Huang, Chao-Ying
Lu, Ching-Ho
Lai, Chen-An
Chao, Mango C. -T.
Huang, Rei-Fu
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 2014
摘要: The recent research works of dual-port SRAM have focused on developing new write-assist techniques to suppress the potential inter-port write disturbance under low operating voltage and high process variation. However, the testing related issues induced by those newly proposed write-assist techniques have not been discussed yet in the previous literatures. In this paper, we first implemented a new write-assist dual-port SRAM proposed in [10] by using a 28nm LP process and then discussed the faulty behavior of injecting different resistive-open defects into both the SRAM cell and write-assist circuit. Next, we developed new test methods to detect the hard-to-detect resistive-open defects and proposed a corresponding March-like algorithm that covers a widely used March C-as well as the proposed test methods. Last, the required DfT for the proposed test methods was also discussed.
URI: http://hdl.handle.net/11536/25127
ISBN: 978-1-4799-2611-4
ISSN: 1093-0167
期刊: 2014 IEEE 32ND VLSI TEST SYMPOSIUM (VTS)
Appears in Collections:Conferences Paper