標題: ELECTROMAGNETIC SIMULATION OF VLSI CIRCUITS BY THE MODIFIED ADI-FDTD METHOD
作者: Hwang, Jiunn-Nan
Chen, Fu-Chiarng
交大名義發表
電機工程學系
National Chiao Tung University
Department of Electrical and Computer Engineering
關鍵字: alternating-direction implicit;finite-difference time-domain;perfectly matched layer;modified conductivity profile;stability
公開日期: 1-Nov-2014
摘要: The alternating direction implicit (ADI) finite-difference time-domain (FDTD) method can be used to simulate very large scale integration (VLSI) circuits efficiently as the time step is not restricted by the Courant-Friedrich-Levy stability condition. When the Berenger\'s split-field perfectly matched layer (PML) absorbing boundary condition is used for the ADI-FDTD method for open region simulation, the PML implementation will make this scheme unstable. In this article, the modified PML conductivity profiles are proposed to improve the stability of this scheme. Numerical simulations of the VLSI interconnect and RF inductor in time domain and frequency domain will be demonstrated to show the efficiency and accuracy of this method. (C) 2014 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.28643
http://hdl.handle.net/11536/25152
ISSN: 0895-2477
DOI: 10.1002/mop.28643
期刊: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 56
Issue: 11
起始頁: 2530
結束頁: 2534
Appears in Collections:Articles


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