Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors

標題:	Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors
作者:	Zou, Xuming Wang, Jingli Chiu, Chung-Hua Wu, Yun Xiao, Xiangheng Jiang, Changzhong Wu, Wen-Wei Mai, Liqiang Chen, Tangsheng Li, Jinchai Ho, Johnny C. Liao, Lei 交大名義發表材料科學與工程學系 National Chiao Tung University Department of Materials Science and Engineering
關鍵字:	MoS2;top-gated;transistors;interface engineering;two-dimensional materials
公開日期:	24-九月-2014
摘要:	Experimental evidence of the optimized interface engineering effects in MoS2 transistors is demonstrated. The MoS2/Y2O3/HfO2 stack offers excellent interface control. Results show that HfO2 layer can be scaled down to 9 nm, yet achieving a near-ideal sub-threshold slope (65 mv/dec) and the highest saturation current (526 mu A/mu m) of any MoS2 transistor reported to date.
URI:	http://dx.doi.org/10.1002/adma.201402008 http://hdl.handle.net/11536/25173
ISSN:	0935-9648
DOI:	10.1002/adma.201402008
期刊:	ADVANCED MATERIALS
Volume:	26
Issue:	36
起始頁:	6255
結束頁:	6261
顯示於類別：	期刊論文

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