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dc.contributor.authorShih, Jian-Yuen_US
dc.contributor.authorChen, Yen-Chien_US
dc.contributor.authorChiu, Chih-Hungen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2014-12-08T15:36:50Z-
dc.date.available2014-12-08T15:36:50Z-
dc.date.issued2014-08-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2014.2327117en_US
dc.identifier.urihttp://hdl.handle.net/11536/25228-
dc.description.abstractMotional resistance of TSV-based resonator devices with 3D integration techniques is investigated at the operating oscillating mode. Even with well-developed TSV and device fabrication, the motional resistance issue of the TSV-based resonator device is found due to the poor connected Ag paste. The corresponding solution is demonstrated by a modified concave Cu TSVs structure. This modified concave Cu TSV design shows the excellent device characteristics and no visible gaps between the Cu TSVs and resonator devices to insure a good electrical connection.en_US
dc.language.isoen_USen_US
dc.subjectThree-dimensional (3D) integrationen_US
dc.subjectconcave through silicon via (TSV)en_US
dc.subjectmotional resistanceen_US
dc.titleMotional Resistance Issue of TSV-Based Resonator Device and Its Improvement With a Concave Cu TSV Structural Designen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2014.2327117en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume35en_US
dc.citation.issue8en_US
dc.citation.spage865en_US
dc.citation.epage867en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000341573000019-
dc.citation.woscount0-
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