標題: Fabricating a micromould insert using a novel process
作者: Chen, RH
Chang, CC
Cheng, CM
機械工程學系
Department of Mechanical Engineering
關鍵字: doping;electroforming;ICP-RIE;micromould insert;microstructures;PECVD;seed layer
公開日期: 2005
摘要: A new method of fabricating micromould inserts that is compatible with semiconductor manufacturing is proposed. Diffusion of phosphorous at a high temperature is first used to increase the electric conductivity of the surface of the silicon wafer to generate a silicon-based seed layer for electroforming. If the process temperature and the duration of doping with phosphorous are controlled, then the electric conductivity of this novel silicon-based seed layer can be expected to equal that of a metal seed layer. Then, a structure layer of amorphous silicon is successfully formed onto the silicon-based seed layer, by plasma enhanced chemical vapor deposition (PECVD). The structure layer has none of the defects that would be present if a metal seed layer were used to replace the silicon-based seed layer. Finally, a silicon-based master microstructure was created by using ICPRIE to etch the structure layer. The silicon-based master has been demonstrated to be useable in successfully fabricating, by electroforming, a metal micromould insert with a large area and high aspect ratio.
URI: http://hdl.handle.net/11536/25266
http://dx.doi.org/10.1007/s00170-003-1889-2
ISSN: 0268-3768
DOI: 10.1007/s00170-003-1889-2
期刊: INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY
Volume: 25
Issue: 7-8
起始頁: 678
結束頁: 684
Appears in Collections:Articles


Files in This Item:

  1. 000228978700007.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.