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dc.contributor.authorKao, YHen_US
dc.contributor.authorHsu, MTen_US
dc.date.accessioned2014-12-08T15:37:03Z-
dc.date.available2014-12-08T15:37:03Z-
dc.date.issued2005-01-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2004.840974en_US
dc.identifier.urihttp://hdl.handle.net/11536/25444-
dc.description.abstractA theoretical analysis on low phase noise of voltage-controlled oscillators (VCOs) based on complementary cross-coupled LC VCO by 0.35-mum complementary metal oxide semiconductor technology is demonstrated. From the procedure of optimization steps, the excess noise factor of the amplifier coming from the active device has been determined. The proposed VCO operates at 2 GHz with phase noise of -116 dBc/Hz at offset frequency 600 kHz. The power consumption is 22.62 mW under 3 V bias with 9.1% frequency tuning. The achievement of low phase noise is also matched with prediction by formula in the frequency domain.en_US
dc.language.isoen_USen_US
dc.subjectcomplementary metal oxide semiconductor (CMOS)en_US
dc.subjectexcess noise factoren_US
dc.subjectphase noiseen_US
dc.subjectvoltage-controlled oscillator (VCO)en_US
dc.titleTheoretical analysis of low phase noise design of CMOS VCOen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2004.840974en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume15en_US
dc.citation.issue1en_US
dc.citation.spage33en_US
dc.citation.epage35en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.identifier.wosnumberWOS:000226296300012-
dc.citation.woscount2-
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