標題: Effects of low-temperature NH3 treatment on the characteristics of HfO2/SiO2 gate stack
作者: Lu, WT
Chien, CH
Huang, IJ
Yang, MJ
Lehnen, P
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2005
摘要: The effects of postdeposition low- temperature (400 degrees C) NH3 treatment (LTN treatment) on the characteristics of the HfO2/ SiO2 gate stack with the TiN gate electrode were studied in this work. After the HfO2 films were deposited using an AIXTRON Tricent atomic vapor deposition system, the LTN treatment was performed prior to the postdeposition annealing (PDA) step to prevent the growth of an additional interfacial layer, which is known to accompany the traditional high- temperature nitridation technique. The effective electrical oxide thickness for the devices annealed at 700 C PDA, either with or without LTN treatment, was estimated to be about 2.2 and 2.3 nm, respectively, without considering quantum effects. It was found that the LTN treatment effectively improves the characteristics of the HfO2/ SiO2 stack gates, such as capacitance- voltage (C-V) characteristics, frequency dispersion, trap generation rate, and dielectric breakdown voltage even at the high PDA temperature of 700 C. (c) 2005 The Electrochemical Society.
URI: http://hdl.handle.net/11536/25529
http://dx.doi.org/10.1149/1.2039629
ISSN: 0013-4651
DOI: 10.1149/1.2039629
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 152
Issue: 11
起始頁: G799
結束頁: G803
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