標題: Numerical and experimental analysis of Cu diffusion in plasma-treated tungsten barrier
作者: Tsai, KC
Wu, WF
Chen, JC
Pan, TJ
Chao, CG
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2005
摘要: This work investigates Cu diffusion in sputtered and N2O plasma-treated W films. N2O plasma-treated W barrier has a nanostructured surface layer and shows high thermal stability and the best barrier properties. Also investigated herein are the lattice and grain boundary diffusivities extracted from the Cu penetration depth profiles using the Whipple analysis of grain boundary diffusion and Fick's second law of diffusion. Analysis indicates that the diffusion models correlate well with experimental results. (C) 2004 The Electrochemical Society.
URI: http://hdl.handle.net/11536/25530
http://dx.doi.org/10.1149/1.1833631
ISSN: 0013-4651
DOI: 10.1149/1.1833631
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 152
Issue: 1
起始頁: G83
結束頁: G91
顯示於類別:期刊論文


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