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dc.contributor.authorLu, Chao-Hungen_US
dc.contributor.authorChen, Hung-Mingen_US
dc.contributor.authorLiu, Chien-Nan Jimmyen_US
dc.date.accessioned2014-12-08T15:38:08Z-
dc.date.available2014-12-08T15:38:08Z-
dc.date.issued2011-01-01en_US
dc.identifier.issn1016-2364en_US
dc.identifier.urihttp://hdl.handle.net/11536/26156-
dc.description.abstractBillions of transistors are placed in one single chip (SoC) with advanced manufacturing technology. Further development is obstructed by the ability to the manufacture of SoC and the signal integrity. Stacking IC is an alternative choice when we design a high-performance high-density chip. Design flow (especially physical design) is facing different issues when compared with 2D IC design. The location of the I/Os seriously affect the number of 3D-Vias and their total area in the stacking IC. This paper proposes a Stacking IC architecture and the corresponding design flow to solve the I/O and 3D-Via problems. In this flow, we have developed a system partition approach to minimize the number of 3D-Vias and balance the I/O number of each tier, and modified one traditional floorplan method to optimize the I/O and module locations. The experimental results are encouraging in the GSRC benchmarks. Compared with greedy and intuitive methods, our framework reduces the number of 3D-Vias by 30.02% on the average and can balance the I/O count of each tier. The dead space of the final floorplan is reduced by 14.13%.en_US
dc.language.isoen_USen_US
dc.subjectstacking ICen_US
dc.subjectpartitionen_US
dc.subjectfloorplanningen_US
dc.subjectTSVen_US
dc.subject3D-viaen_US
dc.titleDesign Planning with 3D-Via Optimization in Alternative Stacking Integrated Circuitsen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF INFORMATION SCIENCE AND ENGINEERINGen_US
dc.citation.volume27en_US
dc.citation.issue1en_US
dc.citation.spage287en_US
dc.citation.epage302en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000286692500019-
dc.citation.woscount0-
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