標題: Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory
作者: Chen, Shih-Cheng
Chang, Ting-Chang
Chen, Shih-Yang
Li, Hung-Wei
Tsai, Yu-Ting
Chen, Chi-Wen
Sze, S. M.
Yeh(Huang), Fon-Shan
Tai, Ya-Hsiang
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 2011
摘要: This article investigates the carrier transport phenomenon and multilevel switching mechanism of Cr(2)O(3)-based resistive random access memory (RRAM) with Pt/Cr(2)O(3)/TiN structure. Before the forming process, the interfacial Schottky barrier dominates the carrier transport. The barrier heights of Pt/Cr(2)O(3) and Cr(2)O(3)/TiN are 0.7 and 0.96 eV, respectively. After the forming process, RRAM at a low resistance state follows the Ohmic conduction. While RRAM is switched to a high resistance state during the reset process, the Frenkel-Poole emission becomes a dominant conduction mechanism. The multilevel resistance states were achieved by applying corresponding reset voltages to the device for controlling the trap levels of the Cr(2)O(3) layer. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3518710] All rights reserved.
URI: http://hdl.handle.net/11536/26191
http://dx.doi.org/10.1149/1.3518710
ISSN: 1099-0062
DOI: 10.1149/1.3518710
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 14
Issue: 2
起始頁: H103
結束頁: H106
Appears in Collections:Articles