完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, Chang-Tzu | en_US |
dc.contributor.author | Ker, Ming-Dou | en_US |
dc.date.accessioned | 2014-12-08T15:38:25Z | - |
dc.date.available | 2014-12-08T15:38:25Z | - |
dc.date.issued | 2010-12-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2010.2079530 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26301 | - |
dc.description.abstract | An electrostatic discharge (ESD) protection design for smart power applications with lateral double-diffused MOS (LDMOS) transistors is investigated. With the gate-driven and substrate-triggered circuit techniques, the n-channel LDMOS can be quickly turned on to protect the output drivers during an ESD stress event. The proposed gate-driven and substrate-triggered ESD protection circuits have been successfully verified in a 0.35-mu m 5 V/40 V bipolar CMOS DMOS (BCD) process, which can sustain ESD voltages of 4 kV in human-body-model (HBM) and 275 V in machine-model (MM) ESD tests. In addition, the power-rail ESD protection design can also be achieved with a stacked structure to protect 40-V power pins without a latchup issue in the smart power integrated circuits. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Bipolar CMOS DMOS (BCD) process | en_US |
dc.subject | electrostatic discharge (ESD) | en_US |
dc.subject | ESD protection | en_US |
dc.subject | latchup | en_US |
dc.title | ESD Protection Design With Lateral DMOS Transistor in 40-V BCD Technology | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2010.2079530 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 57 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 3395 | en_US |
dc.citation.epage | 3404 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000284417700022 | - |
dc.citation.woscount | 8 | - |
顯示於類別: | 期刊論文 |