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dc.contributor.authorChen, MCen_US
dc.contributor.authorKu, SHen_US
dc.contributor.authorChan, CTen_US
dc.contributor.authorWang, THen_US
dc.date.accessioned2014-12-08T15:38:41Z-
dc.date.available2014-12-08T15:38:41Z-
dc.date.issued2004-08-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1773384en_US
dc.identifier.urihttp://hdl.handle.net/11536/26472-
dc.description.abstractThe impact of oxide soft breakdown location on threshold voltage hysteresis in partially depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors with an ultrathin oxide (1.6 nm) is investigated. Two breakdown enhanced hysteresis modes are identified. In a drain-edge breakdown device, excess holes result from band-to-band tunneling flow to the floating body, thus causing threshold voltage variation in drain bias switching. In contrast, in a channel breakdown device, enhanced threshold hysteresis is observed during gate bias switching because of increased valence band electron tunneling. Our findings reveal that soft breakdown enhanced hysteresis effect can be a serious reliability issue in silicon-on-insulator devices with floating body configuration. (C) 2004 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleSoft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1773384en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume96en_US
dc.citation.issue4en_US
dc.citation.spage2297en_US
dc.citation.epage2300en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000223055100079-
dc.citation.woscount2-
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