標題: | Effect of atmosphere on growth of single crystal zinc oxide nanowires |
作者: | Li, SY Lin, P Lee, CY Tseng, TY 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-Aug-2004 |
摘要: | Single crystal zinc oxide (ZnO) nanowires were prepared by using enhanced two-step vapor-liquid-solid (VLS) growth mechanism. The experimental results indicate that the growth rate and morphologies of the nanowires depends on the carrier gas ambient during the thermal reaction process. The ZnO nanowire grown with N-2, not only has the smaller diameter of about similar to 30 nm but also exhibits a higher growth rate and larger number of density of nanowires per unit area than those grown with Ar. The photoluminescence measurements show that the ZnO nanowires grown with N-2 have a stronger ultraviolet emission than those grown with Ar. (C) 2004 Kluwer Academic Publishers. |
URI: | http://dx.doi.org/10.1023/B:JMSE.0000032584.87349.22 http://hdl.handle.net/11536/26553 |
ISSN: | 0957-4522 |
DOI: | 10.1023/B:JMSE.0000032584.87349.22 |
期刊: | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS |
Volume: | 15 |
Issue: | 8 |
起始頁: | 505 |
結束頁: | 510 |
Appears in Collections: | Articles |
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