Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004)

標題:	Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004)
作者:	Chang, TC Yan, ST Yang, FM Liu, PT Sze, SM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	7-Jun-2004
URI:	http://dx.doi.org/10.1063/1.1761633 http://hdl.handle.net/11536/26679
ISSN:	0003-6951
DOI:	10.1063/1.1761633
期刊:	APPLIED PHYSICS LETTERS
Volume:	84
Issue:	23
起始頁:	4815
結束頁:	4815
Appears in Collections:	Articles

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APA	Chang, T., Yan, S., Yang, F., Liu, P., & Sze, S. (2004). Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004). WOS:000221656900075.
Bibtex	@article{Chang2004Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, title={Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004)}, author={Chang, TC and Yan, ST and Yang, FM and Liu, PT and Sze, SM}, journal={WOS:000221656900075}, year={2004}, url={https://ir.lib.nycu.edu.tw/handle/11536/26679?locale=en}, }